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| Transistors 2SC5580 Silicon NPN epitaxial planer type Unit: mm (0.425) For high-frequency oscillation / switching I Features * High transition frequency fT * S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.3+0.1 -0.0 3 0.15+0.10 -0.05 1.250.10 2.10.1 5 1 2 0.20.1 0 to 0.1 0.90.1 0.9+0.2 -0.1 (0.65) (0.65) 1.30.1 2.00.2 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 8 3 50 150 150 -55 to +150 Unit V V V mA mW C C 10 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package Marking Symbol: 3R I Electrical Characteristics Ta = 25C 3C Parameter Emitter cutoff current Collector to base voltage Forward current transfer ratio hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol IEBO VCBO hFE hFE(RATIO) VCE(sat) fT Cob Conditions VEB = 2 V, IC = 0 IC = 100 A, IE = 0 VCE = 4 V, IC = 2 mA VCE = 4 V, IC = 100 A/2 mA IC = 20 mA, IB = 4 mA VCE = 5 V, IC = 15 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.1 1.2 1.6 15 100 0.6 350 1.5 0.5 dB V GHz pF Min Typ Max 2 Unit A V 1 |
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